The International Conference on Silicon Carbide and Related Materials (ICSCRM) September 11-16, Davos, Switzerland In September (11-16) we have participated in the International Conference on Silicon Carbide and related Materials (ICSCRM). The conference is dedicated to latest developments in the field of Silicon Carbide manufacturing, characterizations and applications. The major drivers for this market are increasing demand for motor drives, growing application of SiC devices in RF and cellular base station, and increasing use of SiC in semiconductor to perform at high temperature and high voltage environment. ICSCRM hosted ~850 participants that represent major players in SiC in the field. Rigaku had a strong presence with a booth, five employees, several posters and an industrial talk. Two X-ray metrologies were presented: 1. Total Reflection X-ray Fluorescence TXRF3760 for detection of metal surface contamination and, to improve the quality of Gate Oxide for SiC MOS-FET. 2. X-ray Topography, XRTmicron to quantify dislocation in the substrate and film. SiC Power Device Properties are Influenced by Dislocations.
The booth was very well attended with customers from Asia, US and Europe.
As SiC becomes mainstream, TXRF3760 is the de-facto standard tool for contamination and XRTmicron is rapidly penetrating into the market and being adopted at major SiC wafer and epi manufacturer. | 
